SA2

Insulated Gate Bipolar Transistor, 17A I(C), 650V V(BR)CES, N-Channel, TO-220AB, TO-220-3-FP, 3 PIN

Power Field-Effect Transistor,

Rectifier Diode, 1 Phase, 1 Element, 1700V V(RRM), Silicon, 11.80 X 9.52 MM, DIE-1

Insulated Gate Bipolar Transistor, 1390A I(C), 1700V V(BR)CES, N-Channel, MODULE-12

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9

Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, 12.56 X 11.31 MM, DIE-2

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor,

Insulated Gate Bipolar Transistor, 200A I(C), 650V V(BR)CES, N-Channel

Power Field-Effect Transistor, 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN

Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, 2.44 X 2.42 MM, DIE-2

Power Field-Effect Transistor, 80A I(D), 55V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Rectifier Diode, 1 Phase, 1 Element, 50A, 600V V(RRM), Silicon, 4.60 X 3.05 MM, DIE-1

Power Field-Effect Transistor,

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-11

Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9

Switching Controller, Current-mode, 75kHz Switching Freq-Max, BICMOS, PZFM6, ROHS COMPLIANT, PLASTIC, TO-220, 6 PIN

Rectifier Diode, 1 Phase, 1 Element, 100A, 1700V V(RRM), Silicon, 7.70 X 7.70 MM, DIE-1